inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistors MJF45H11 description low collector saturation voltage- : v ce(sat) = -1.0v(max.)@ i c = -8a fast switching speeds complement to type mjf44h11 applications designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,c onverters and power amplifier. absolute maximum ratings(t a =25 ) symbol parameter value unit v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -20 a collector power dissipation @t c =25 36 p c collector power dissipation @t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 3.5 /w r th j-a thermal resistance,junction to ambient 62.5 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistors MJF45H11 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = -30ma; i b = 0 -80 v v ce (sat) collector-emitter saturation voltage i c = -8a; i b = -0.4 a -1.0 v v be (sat) base-emitter saturation voltage i c = -8a; i b = -0.8 a -1.5 v i ces collector cutoff current v ce =rated v ceo ; -1.0 a i ebo emitter cutoff current v eb = -5v; i c = 0 -10 a h fe-1 dc current gain i c = -2a; v ce = -1v 60 h fe-2 dc current gain i c = -4a; v ce = -1v 40 c ob output capacitance v cb = -10v, f= 0.1mhz 230 pf f t current-gain?bandwidth product i c =-0.5a; v ce =-10v; f test =20mhz 40 mhz switching times t on turn-on time i c = -5a; i b1 = -0.5a 135 ns t s storage time 500 ns t f fall time i c = -5a; i b1 = -i b2 = -0.5a 100 ns
|
